《Semiconductor Science & Technology》
Thermal Stability of the Current Transport Mechanisms in Ni-Based Ohmic Contacts on n- and p-Implanted 4H-SiC
作者:
M Vivona，G Greco，F Giannazzo，R Lo Nigro，S Rascunà
关键词:
摘要:
Studying the temperature dependence of the electrical properties of Ohmic contacts formed on ion-implanted SiC layers is fundamental to understand and to predict the behaviour of practical devices. This paper reports the electrical characterization, as a function of temperature, of Ni-based Ohmic contacts, simultaneously formed on both n- or p-type implanted 4H-SiC. A structural analysis showed the formation of the NiSi phase after an annealing leading to Ohmic behaviour. The temperature-dependence of the specific contact resistance indicated that a thermionic field emission mechanism (TFE) dominates the current transport for contacts formed on p-type material, while a field emission (FE) is likely occurring in the contacts formed on n-type implanted SiC. The values of the barrier height were 0.75 eV on p-type material and 0.45 eV on n-type material. The thermal stability of the current transport mechanisms and related physical parameters has been demonstrated upon a long-term (up to 95 h) cycling in the temperature range 200-400 掳C.
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