作者:
H Vang，M Lazar，P Brosselard，C Raynaud，P Cremillieu
关键词:
SiC；ohmic contact；p-type；Ni/Al；specific resistance
摘要:
Investigations on Ni/Al alloys to form ohmic contacts to p-type 4H-SiC are presented in this paper. Different ratios of Ni/Al were examined. Rapid thermal annealing was performed in argon atmosphere at 40002 66 C for 1min, followed by an annealing at 100002 66 C for 2min. In order to extract the specific contact resistance, TLM test structures were fabricated. A specific contact resistance of 3×10 615 Ωcm 2 was obtained reproducibly on Al 2+ implanted p-type layers, having a doping concentration of 1×10 19 cm 613 . The lowest specific contact resistance value measured amounts to 8×10 616 Ωcm 2 .
在线下载