《Materials Science & Engineering B》
Phase Formation at Rapid Thermal Annealing of Al/Ti/Ni Ohmic Contacts on 4H-SiC
作者:
K Vassilevski，K Zekentes，K Tsagaraki，G Constantinidis，I Nikitina
关键词:
Silicon carbide；Ohmic contacts；Cermet；Aluminum；Thermionic emission
摘要:
Ohmic contacts to the top p-type layers of 4H-SiC p + –n–n + epitaxial structures having an acceptor concentration lower than 1×10 19 cm 613 were fabricated by the rapid thermal anneal of multilayer Al/Ti/Pt/Ni metal composition. The rapid thermal anneal of multilayer A1/Ti/Pt/Ni metal composition led to the formation of duplex cermet composition containing Ni 2 Si and TiC phases. The decomposition of the SiC under the contact was found to be down to a depth of about 100 nm. The contacts exhibited a contact resistivity R c of 9×10 615 Ω cm 612 at 21°C, decreasing to 3.1×10 615 Ω cm 612 at 186°C. It was found that thermionic emission through the barrier having a height of 0.097 eV is the predominant current transport mechanism in the fabricated contacts.
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