《Journal of Applied Physics》
Mechanism of Ohmic Behavior of Al/Ti Contacts to p-Type 4H-SiC after Annealing
作者:
BJ Johnson，MA Capano
关键词:
Metal-nonmetal contacts；Kinetics of defect formation and annealing；Structure of clean surfaces；Transmission electron microscopy
摘要:
We report on experiments to determine the mechanism of ohmic behavior of Al/Ti contacts to p-type SiC after thermal annealing. After ruling out heavy doping of the SiC surface due to diffusion of aluminum, and electric field enhancement due to surface morphology modification, we propose that the only remaining explanation is alloy formation at the metal鈥搒emiconductor interface. We present evidence from x-ray diffraction studies identifying these alloys as Ti 3 SiC 2 and Al 4 C 3 , and review corroborating transmission electron microscopy studies. An alloy-assisted ohmic contact mechanism is presented and discussed.
在线下载