作者:
B Pécz，L Tóth，MAD Forte-Poisson，J Vacas
关键词:
SiC；transmission electron microscopy；ohmic contacts；solid phase reactions；thin films
摘要:
Al (150 nm)/Ti (30 nm) contacts have been successively deposited onto p-type 6H-SiC wafers. The layer structure has been annealed at 900 掳C for 4 min. The annealed contacts are Ohmic. The structure of the annealed contact layers was identified as a Ti SiC layer on SiC and covered by an Al Ti layer. Both layers and phases are formed as a result of solid phase interaction between the metallic layers and SiC, and are epitaxial to the 6H-SiC. Ti SiC is suggested as a new contact material to p-type SiC, which promises high temperature stable contacts due to its excellent properties.
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