《Journal of Materials Research》
Chemistry, Microstructure, and Electrical Properties at Interfaces between Thin Films of Cobalt and Alpha (6H) Silicon Carbide (0001)
作者:
LM Porter，RF Davis，JS Bow，MJ Kim，RWCRC Glass
关键词:
LASER SAFETY；ELECTRICAL HAZARDS
摘要:
Epitaxial thin films (4) of Ti contacts have been deposited via UHV electron beam evaporation at room temperature on monocrystalline, n-type, alpha (6H)-SiC(0001). The interfacial chemistry and microstructure, and the electrical properties, were investigated at room temperature and after annealing at 700 1010 V. The Schottky barrier heights calculated from x-ray photoelectron spectroscopy and I-V and V-V measurements were between 0.79 and 0.88 eV for the as-deposited contacts and between 0.86 and 1.04 eV for the annealed contacts.
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