《Applied Physics Letters》

Contact Resistance Measurements on p-Type 6H-SiC

作者:
J CroftonPA BarnesJR WilliamsJA Edmond

关键词:
Contact resistanceEpitaxyDopingSemiconductor junctionsTransmission measurement

摘要:
Specific contact resistancemeasurements are reported for Al‐Ti ohmic contacts to epitaxialp‐type 6H‐SiC as a function of epitaxialdoping. The circular t...

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