作者:
J Crofton,PA Barnes,JR Williams,JA Edmond
关键词:
Contact resistance;Epitaxy;Doping;Semiconductor junctions;Transmission measurement
摘要:
Specific contact resistancemeasurements are reported for Al‐Ti ohmic contacts to epitaxialp‐type 6H‐SiC as a function of epitaxialdoping. The circular t...
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