《Applied Physics Letters》
Electrical Characterization of TiC Ohmic Contacts to Alumimum Ion Implanted 4H-Silicon Carbide
作者:
SK Lee，CM Zetterling，E Danielsson，M Ostling，JP Palmquist
关键词:
Aluminium；Semiconductor junctions；Carbides；Dielectric nitrides；Electrical resistivity
摘要:
We report on the investigation of epitaxial TiC ohmic contacts to Al ion implanted 4H-SiC. TiC ohmic contacts were formed by coevaporation of Ti and C[sub 60] at low temperature (<500 00°C). A sacrificial silicon nitride (Si[sub 3]N[sub 4]) layer was deposited on the silicon carbide substrate prior to Al implantation in order to reach a high Al dopant concentration at the surface while maintaining a low dose. The combination of epitaxially grown TiC and the silicon nitride layer resulted in a promising scheme to make low resistivity ohmic contacts. The lowest contact resistivity (0301[sub C]) and sheet resistance (R[sub s]) of the implanted layer at 25 00°C were as low as 2x10[sup -5] 0208 cm[sup 2] and 0.6 k0208/□, respectively. 0008 2000 American Institute of Physics.
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