作者:
BJ Baliga
关键词:
Dc-Dc Converter ；Gate-Drive Circuit ；Inverter ；Modular Multilevel Converter ；Parallel Connection ；Power Electronics ；Reverse Conduction ；SiC BJT ；SiC JFET ；SiC MOSFET
摘要:
Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s) Chapter 1: Introduction (72 KB) Contents: Material Properties and Technology Breakdown Voltage PiN Rectifiers Schottky Rectifiers Shielded Schottky Rectifiers Metal-Semiconductor Field Effect Transistors The Baliga-Pair Configuration Planar Power MOSFETs Shielded Planar MOSFETs Trench-Gate Power MOSFETs Shielded Trendch-Gate MOSFETs Charge Coupled Structures Integral Diodes Lateral High Voltage FETs Synopsis Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices. The first tutorial treatment of silicon carbide power devicesUses rigorous analytical formulations to describe basic physical principlesDescribes the design and performance of Schottky rectifiers with trade-offs between the on-state and reverse blocking characteristicsAnalyzes numerous field effect transistors with emphasis on techniques for shielding the gate oxideIncludes a thorough review of material properties -->Keywords: Power Semiconductor Devices; Silicon Carbide; Wide Band Gap Semiconductors; Power Electronics; Power Rectifiers; Field Effect Transistors; Schottky Diodes; --> Updated pp & pub date on 6/1/2006 Update price on 30/3/2007 Added ebook on 23/08/2007 Updated price on 20/06/2008 Lionel Seow -->
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