[1]
|
孟婷, 赵二俊, 刘雨欣. Co掺杂β-Ga2O3的电学性质和电荷转变能级的第一性原理计算[J]. 原子与分子物理学报, 2023, 40(2): 187-194.
|
[2]
|
玄鑫淼, 王加恒, 毛彦琦, 等. 基于云母衬底生长的非晶Ga2O3柔性透明日盲紫外光探测器研究[J]. 物理学报, 2021, 70(23): 369-377.
|
[3]
|
陈彦成. 氧化镓基日盲紫外光电探测器研究[D]: [硕士学位论文]. 郑州: 郑州大学, 2019.
|
[4]
|
崔书娟. 氧化镓基光电探测器的研制与研究[D]: [博士学位论文]. 北京: 中国科学院大学, 2018.
|
[5]
|
Varley, J.B., Weber, J.R., Janotti, A. and Van de Walle, C.G. (2010) Oxygen Va-cancies and Donor Impurities in β-Ga2O3. Applied Physics Letters, 97, Article ID: 142106. https://doi.org/10.1063/1.3499306
|
[6]
|
An, Y.H., Zhi, Y.S., Cui, W., et al. (2017) Thickness Tuning Photoe-lectric Properties of β-Ga2O3 Thin Film Based Photodetectors. Journal of Nanoscience and Nanotechnology, 17, 9091-9094. https://doi.org/10.1166/jnn.2017.13873
|
[7]
|
Lee, M.L., Chi, P.-F. and Sheu, J.K. (2009) Photo-detectors Formed by an Indium Tin Oxide/Zincoxide/p-Type Gallium Nitride Heterojunction with High Ultravio-let-to-Visible Rejection Ratio. Applied Physics Letters, 94, Article ID: 013512. https://doi.org/10.1063/1.3064130
|
[8]
|
冉景杨, 高灿灿, 马奎, 杨发顺. 磁控溅射功率对β-Ga2O3薄膜特性的影响[J]. 原子与分子物理学报, 2022, 39(4): 96-100.
|
[9]
|
张静林, 李家印, 张龙, 等. 本征缺陷对β-Ga2O3光催化性质影响的第一性原理研究[J]. 原子与分子物理学报, 2022, 39(3): 28-35.
|
[10]
|
盛拓. 氧化镓薄膜光电导日盲紫外探测器的研制[D]: [硕士学位论文]. 成都: 电子科技大学, 2015.
|
[11]
|
郭道友, 李培刚, 陈政委, 等. 超宽禁带半导体 β-Ga2O3及深紫外透明电极、日盲探测器的研究进展[J]. 物理学报, 2019, 68(7): 7-42.
|
[12]
|
付宏远, 张猛, 张宝萍, 等. 溅射功率对氧化镓薄膜特性的影响[J]. 河南科技大学学报(自然科学版), 2021, 42(1): 95-99.
|
[13]
|
杨妮. 氧化镓薄膜的择优取向制备及其应用研究[D]: [硕士学位论文]. 哈尔滨: 哈尔滨工业大学, 2016.
|
[14]
|
李秀华, 张敏, 杨佳, 等. 薄膜厚度对射频磁控溅射β-Ga2O3薄膜光电性能的影响[J]. 物理学报, 2022, 71(4): 286-297.
|
[15]
|
杨赉, 高灿灿, 杨发顺, 马奎. 后退火时间对磁控溅射制备β-Ga2O3薄膜材料的影响[J]. 原子与分子物理学报, 2022, 39(5): 119-124.
|
[16]
|
Zhang, Y., Yan, J., Li, Q., et al. (2011) Optical and Structural Properties of Cu-Doped β-Ga2O3 Films. Materials Science and Engineering: B, 176, 846-849. https://doi.org/10.1016/j.mseb.2011.04.014
|
[17]
|
Kumar, S.S., Rubio, E.J., Noor-A-Alam, M., et al. (2013) Structure, Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium Oxide Thin Films. The Journal of Physical Chemistry C, 117, 4194-4200.
https://doi.org/10.1021/jp311300e
|
[18]
|
Huang, J., Li, B., Ma, Y., et al. (2018) Effect of Homo-Buffer Layers on the Properties of Sputtering Deposited Ga2O3 Films. Materials Science and Engineering, 362, Article ID: 012003. https://doi.org/10.1088/1757-899X/362/1/012003
|
[19]
|
罗月婷, 肖黎, 陈远豪, 等. 雾化辅助化学气相沉积法氧化镓薄膜生长研究[J]. 人工晶体学报, 2022, 51(7): 1163-1168.
|
[20]
|
Oh, S., Jung, Y.H., Mastro, M.A., et al. (2015) Development of Solar-Blind Photodetectors Based on Si-Implanted β-Ga2O3. Optics Express, 23, 28300-28305. https://doi.org/10.1364/OE.23.028300
|
[21]
|
Feng, Z., Anhar Uddin Bhuiyan, A.F.M., Kalarickal, N.K., Rajan, S. and Zhao, H. (2020) Mg Acceptor Doping in MOCVD (010) β-Ga2O3. Applied Physics Letters, 117, Article ID: 222106. https://doi.org/10.1063/5.0031562
|
[22]
|
周淑琴, 刘云圻, 邱文丰, 等. 有机分子束外延技术与研究进展[J]. 物理学进展, 2000(4): 395-406.
|
[23]
|
Guo, D., Wu, Z., Li, P., et al. (2014) Fabrication of β-Ga2O3 Thin Films and Solar-Blind Photodetectors by Laser MBE Technology. Optical Materials Express, 4, 1067-1076. https://doi.org/10.1364/OME.4.001067
|
[24]
|
Bi, X., Wu, Z., Huang, Y. and Tang, W. (2018) Sta-bilization and Enhanced Energy Gap by Mg Doping in ε-Phase Ga2O3 Thin Films. AIP Advances, 8, Article ID: 25008. https://doi.org/10.1063/1.5022600
|
[25]
|
Cheng, Y., Liang, H., Liu, Y., et al. (2013) Influence of N2 and O2 Annealing Treatment on the Optical Bandgap of Polycrystalline Ga2O3:Cu Films. Materials Science in Semicon-ductor Processing, 16, 1303-1307.
https://doi.org/10.1016/j.mssp.2013.03.003
|
[26]
|
Dakhel, A.A. (2013) Investigation of Opto-Dielectric Prop-erties of Ti-Doped Ga2O3 Thin Films. Solid State Sciences, 20, 54-58. https://doi.org/10.1016/j.solidstatesciences.2013.03.009
|
[27]
|
Orita, M., Ohta, H. and Hirano, M. (2000) Deep-Ultraviolet Transparent Conductive β-Ga2O3 Thin Films. Applied Physics Letters, 77, 4166-4168. https://doi.org/10.1063/1.1330559
|
[28]
|
Takakura, K., Koga, D., Ohyama, H., et al. (2009) Evaluation of the Crystalline Quality of β-Ga2O3 Films by Optical Absorption Measurements. Physica B: Condensed Matter, 404, 4854-4857.
https://doi.org/10.1016/j.physb.2009.08.167
|
[29]
|
Wang, D., Ma, X., Xiao, H., Le, Y. and Ma, J. (2021) Ta-Doped Epitaxial β-Ga2O3 Films Deposited on SrTiO3(100) Substrates by MOCVD. Materials Science in Semi-conductor Processing, 128, Article ID: 105749.
https://doi.org/10.1016/j.mssp.2021.105749
|
[30]
|
Zhang, H., Deng, J.X., Zhang, Q., et al. (2021) Trace Amount of Niobium Doped β-Ga2O3 Deep Ultraviolet Photodetector with Enhanced Photo-Response. Optik, 243, Article ID: 167353. https://doi.org/10.1016/j.ijleo.2021.167353
|
[31]
|
Zhao, X., Wu, Z., Zhi, Y., et al. (2017) Improvement for the Performance of Solar-Blind Photodetector Based on β- Ga2O3 Thin Films by Doping Zn. Journal of Physics D: Applied Physics, 50, Article ID: 085102.
https://doi.org/10.1088/1361-6463/aa5758
|
[32]
|
Liu, Z., Huang, Y., Li, H., et al. (2020) Fabrication and Characterization of Mg-Doped ε-Ga2O3 Solar-Blind Photodetector. Vacuum, 117, Article ID: 109425. https://doi.org/10.1016/j.vacuum.2020.109425
|
[33]
|
Ou, S.-L., Wuu, D.-S., Fu, Y-C.., et al. (2012) Growth and Etching Characteristics of Gallium Oxide Thin Films by Pulsed Laser Deposition. Materials Chemistry and Physics, 133, 700-705.
https://doi.org/10.1016/j.matchemphys.2012.01.060
|
[34]
|
Xu, C.X., Liu, H., Pan, X.H. and Ye, Z.Z. (2020) Growth and Characterization of Si-Doped β-Ga2O3 Films by Pulsed Laser Deposition. Optical Materials, 108, Article ID: 110145. https://doi.org/10.1016/j.optmat.2020.110145
|
[35]
|
Orita, M., Hiramatsu, H., Ohta, H., Hirano, M. and Hosono, H. (2002) Preparation of Highly Conductive, Deep Ultraviolet Transparent β-Ga2O3 Thin Film at Low Deposition Temperatures. Thin Solid Films, 411, 134-139.
https://doi.org/10.1016/S0040-6090(02)00202-X
|
[36]
|
Shang, Y., Tang, K., Chen, Z.R., et al. (2021) Growth and Characterization of Ta-Doped Ga2O3 Films Deposited by Magnetron Sputtering. Materials Science in Semi-conductor Processing, 134, Article ID: 106040.
https://doi.org/10.1016/j.mssp.2021.106040
|
[37]
|
Higashiwaki, M., Sasaki, K., Kuramata, A., Masui, T. and Yamakoshi, S. (2012) Gallium Oxide (Ga2O3) Metal-Semiconductor Field-Effect Transistors on Single-Crystal β-Ga2O3 (010) Substrates. Applied Physics Letters, 100, Article ID: 013504. https://doi.org/10.1063/1.3674287
|
[38]
|
Sang, L., Liao, M. and Sumiya, M. (2013) A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures. Sensors, 13, 10482-10518.
https://doi.org/10.3390/s130810482
|
[39]
|
Fan, M.-M., Lu, Y.-J., Xu, K.-L., et al. (2020) Growth and Charac-terization of Sn-Doped β-Ga2O3 Thin Films by Chemical Vapor Deposition Using Solid Powder Precursors toward Solar-Blind Ultraviolet Photodetection. Applied Surface Science, 509, Article ID: 144867. https://doi.org/10.1016/j.apsusc.2019.144867
|
[40]
|
Hu, D.Q., Wang, Y., Wang, Y.D., et al. (2021) Fabrication and Properties of a Solar-Blind Ultraviolet Photodetector Based on Si-Doped β-Ga2O3 Film Grown on p-Si (111) Substrate by MOCVD. Optik, 245, Article ID: 167708.
https://doi.org/10.1016/j.ijleo.2021.167708
|
[41]
|
Yoon, Y., Kim, S., Lee, I.G., Cho, B.J. and Hwang, W.S. (2021) Electrical and Photocurrent Properties of a Polycrystalline Sn-Doped β-Ga2O3 Thin Film. Materials Science in Semiconductor Processing, 121, Article ID: 105430.
https://doi.org/10.1016/j.mssp.2020.105430
|
[42]
|
Qian, Y.P., Guo, D.Y., Chu, X.L., et al. (2017) Mg-Doped p-Type β-Ga2O3 Thin Film for Solar-Blind Ultraviolet Photodetector. Materials Letters, 209, 558-561. https://doi.org/10.1016/j.matlet.2017.08.052
|
[43]
|
Oshima, T., Okuno, T. and Fujita, S. (2007) Ga2O3 Thin Film Growth on c-Plane Sapphire Substratesby Molecular Beam Epitaxy for Deep-Ultraviolet Photodetectors. Japanese Journal of Applied Physics, 46, 7217-7220.
https://doi.org/10.1143/JJAP.46.7217
|
[44]
|
Sheng, T., Liu, X.-Z., Qian, L.-X., Xu, B. and Zhang, Y.-Y. (2022) Photoelectric Properties of β-Ga2O3 Thin Films Annealed at Different Conditions. Rare Metals, 41, 1375-1379. https://doi.org/10.1007/s12598-015-0575-5
|
[45]
|
Qian, L.X., Liu, X.Z., Sheng, T., et al. (2016) β-Ga2O3 So-lar-Blind Deep-Ultraviolet Photodetector Based on a Four- Terminal Structure with or without Zener Diodes. AIP Advances, 6, Article ID: 045009.
https://doi.org/10.1063/1.4947137
|
[46]
|
Alema, F., Hertog, B., Ledyaev, O., et al. (2017) Solar Blind Photo-detector Based on Epitaxial Zinc Doped Ga2O3 Thin Film. Physica Status Solidi, 214, Article ID: 1600688. https://doi.org/10.1002/pssa.201600688
|
[47]
|
Guo, D., Su, Y., Shi, H., et al. (2018) Self-Powered Ultraviolet Photodetector with Super HighPhotoresponsivity (3.05 A/W) Based on the GaN/Sn:Ga2O3 pn Junction. ACS Nano, 12, 12827-12835.
https://doi.org/10.1021/acsnano.8b07997
|
[48]
|
Ahn, S., Lin, Y.-H., Ren, F., et al. (2016) Effect of 5 MeV Proton Irradiation Damage on Performance of β-Ga2O3 Photodetectors. Journal of Vacuum Science & Technology B, 34, Article ID: 041213.
https://doi.org/10.1116/1.4950872
|
[49]
|
Zhao, X., Wu, Z., Guo, D., et al. (2016) Growth and Characterization of α-Phase Ga2−xSnxO3 Thin Films for Solar-Blind Ultraviolet Applications. Semiconductor Science and Technology, 31, Article ID: 065010.
https://doi.org/10.1088/0268-1242/31/6/065010
|
[50]
|
Feng, Q., Li, X., Han, G., et al. (2017) (AlGa)2O3 So-lar-Blind Photodetectors on Sapphire with Wider Bandgap and Improved Responsivity. Optical Materials Express, 7, 1240-1248. https://doi.org/10.1364/OME.7.001240
|
[51]
|
Ahn, S., Ren, F., Oh, S., et al. (2016) Elevated Temperature Performance of Si-Implanted Solar-Blind β-Ga2O3 Photodetectors. Journal of Vacuum Science & Technology B, 34, Article ID: 041207. https://doi.org/10.1116/1.4948361
|