介质厚度不同对碳纳米管场效应晶体管的影响
The Influence of Different Gate Oxide Thickness on Carbon Nanotube Transistors
DOI: 10.12677/APP.2014.45011, PDF, HTML, 下载: 3,297  浏览: 11,545  国家自然科学基金支持
作者: 余文娟：宁波大学理学院，宁波
关键词: 碳纳米管；场效应晶体管；非平衡格林函数；无规则电报信号杂音；Carbon Nanotube； Field Effect Transistor； Non-Equilibrium Green Function； Random Telegraph Signal Noise
摘要: 本文运用非平衡格林函数理论，计算碳纳米管场效应晶体管栅极氧化层中由一个缺陷电荷引起的无规则电报信号杂音。文章模拟计算了该杂音强弱与栅极氧化层厚度的依赖关系，研究单层和复合绝缘层两种不同情况下碳纳米管场效应晶体管中的无规则电报信号杂音。
Abstract: In this thesis, non-equilibrium Green function theory is applied to calculate random-telegraph-signal (RTS) noises caused by a single defect in gate oxide of carbon nanotube field-effect (CNFET) transistors. We investigate systematically how RTS noises depend on gate oxide thickness and discuss the RTS noises with two different situations: a single layer and a composite layer.
文章引用：余文娟. 介质厚度不同对碳纳米管场效应晶体管的影响[J]. 应用物理, 2014, 4(5): 76-84. http://dx.doi.org/10.12677/APP.2014.45011

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