基本情况

王颖，教授，博士生导师。哈尔滨工程大学信通学院微电子学专业负责人。中国电子学会高级会员，中国电源学会高级会员。国家核心期刊《电子元件与材料》编委、《凝聚态物理学进展》编委、《微电子期刊》编委、《半导体技术》理事、《半导体学报网》理事。IEEE TED, IEEE EDL等10余种国际期刊审稿人。以第一作者在IEEE TED, IEEE EDL, APL等国际期刊发表论文37篇（均SCI收录，其中一区1篇、二区21篇、三区13篇）、获得发明专利授权13项。作为项目负责人，主持科研项目包括国家自然科学基金、教育部科学技术研究重大项目、教育部博士点基金（博导类）、黑龙江省自然科学基金、哈尔滨市科技创新人才专项基金（优秀学科带头人）等。入选2010年度教育部“新世纪优秀人才支持计划”。作为第一完成人获黑龙江省科学技术二等奖1项、黑龙江省高校科学技术奖一等奖、二等奖各1项，第十届黑龙江省青年科技奖。

 

研究领域

半导体器件与工艺、集成电路的设计与制造、半导体核辐射探测与抗核辐射加固技术

 

论文发表

  1. Ying Wang, Fei Cao, Mi-lin Zhang, Tao Zhang. Property improvement of Cu-Zr alloy films with ruthenium additive for Cu metallization. Acta Materialia. 2011, 59(1): 400-404
  2. Ying Wang, Hai-fan Hu, Wen-Li Jiao. Gate Enhanced Power UMOSFET with Ultra-Low On-Resistance, IEEE Electron Device Letters. 2010, 31(4): 338-340
  3. Ying Wang, Hai-fan Hu and Wen-Li Jiao. High-Performance Gate-Enhanced Power UMOSFET With Optimized Structure, IEEE Electron Device Letters. 2010, 31(11): 1281-1283
  4. Ying Wang, Ting Li,Yu-xian Chen, Fei Cao. High-Performance Junction Barrier Schottky Rectifier With Optimized Structure. IEEE Transactions on Electron Devices, 2012, 59(1): 114-120
  5. Ying Wang, Li-kun Xu, Zhi-kun Miao. A Super Junction Schottky Barrier Diode with Trench Metal-Oxide-Semiconductor Structure. IEEE Electron Device Letters, 2012, 33(12): 1744-1746
  6. Ying Wang, Hai-fan Hu, Wen-li Jiao, Yun-tao Liu, Lei Shao. Split Gate Enhanced UMOSFET with Optimized Layout of Trench Surrounding Mesa. IEEE Transactions on Electron Devices, 2012, 59(11): 3037-3041
  7. Ying Wang, Yue Zhang, Cheng-hao Yu. Research of Single-event Burnout in Power UMOSFETs. IEEE Transactions on Electron Devices, 2013, 60(2): 887-892
  8. Ying Wang, Fei Cao, Yun-tao Liu and Ming-Hui Ding. Investigation of Zr–Si–N/Zr bilayered film as diffusion barrier for Cu ultralarge scale integration metallization. Applied Physics Letters, 2008, 92: 032108
  9. Ying Wang, Fei Cao, Yun-tao Liu and Lei Shao. Effect of Si Content on the Barrier Property of Zr–Si as a Diffusion Barrier for Cu Metallization. Journal of the Electrochemical Society, 2008, 155: H951-H954
  10. Ying Wang, Fei Cao, Zhongxiao Song, and Chun-Hui Zhao, Improved performance of double Zr-Si layer for copper metallization, Electrochemical and Solid-State Letters, 2010, 13(4): H128-H130
  11. Ying Wang, Fei Cao, Zhongxiao Song, and Chun-Hui Zhao. Application of Zr-Si Film as Diffusion Barrier in Cu Metallization, Electrochemical and Solid-State Letters, 2007, 7(9): C104-C106
  12. Ying Wang, Fei Cao, Xiao-dong Yang, Ming-hui Ding. Barrier capability of Zr–N films with titanium addition against copper diffusion, Materials Chemistry and Physics, 2009, 117(2-3): 425-429
  13. Ying Wang, Xiao-dong Yang, Zhong-xiao Song, Yun-tao Liu. Property improvement of copper films with zirconium additive for ULSI interconnects, Journal of Alloys and Compounds, 2009, 486(1-2): 418-422
  14. Ying Wang, Mi-lin Zhang, Fei Cao, Yun-tao Liu, Lei Shao. Interficial stability of Cu/Cu(Ru)/Si contact system for barrier-free copper metallization. Journal of Alloys and Compounds 2011, 509: L180–L182
  15. Ying Wang, Fei Cao, Lei Shao, Ming-Hui Ding. Diffusion barrier capability of Zr-Si films for copper metallization with different substrate bias voltage, Thin Solid Films, 2009, 517(18): 5593-5596
  16. Ying Wang, Chun-hui Zhao, Fei Cao, Da-wei Yang. Barrier capability of Zr–N films with different density and crystalline structure in Cu/Si contact systems. Materials Letters, 2008, 62: 3761-3763
  17. Ying Wang, Chunhui Zhao, Fei Cao. Effect of substrate temperature on the thermal stability of Cu/Zr–N/Si contact system, Materials Letters, 2008, 62(3): 418-421
  18. Ying Wang, Fei Cao, Xiao-dong Yang, Zhong-xiao Song. Non-crystalline Zr–Si diffusion barrier for Cu/Si contact system under different sputtering power, Journal of Non-Crystalline Solids, 2009, 355(52-54): 2567-2570
  19. Ying Wang, Fei Cao, Mi-lin Zhang, Yun-tao Liu. Effects of thermal annealing on Zr-N doped magnetron sputtering copper. Thin Solid Films. 2011, 519(10): 3407-3410
  20. Ying Wang, Fei Cao, Mi-lin Zhang, Yun-tao Liu. Comparative study of Cu-Zr and Cu-Ru alloy films for barrier-free Cu metallization. Thin Solid Films. 2011, 519(10): 3169-3172
  21. Ying Wang, Changchun Zhu, Ying Li, Chunyu Wu. An Improved Approach for Two-Level Microstructure Fabrication, Electrochemical and Solid-State Letters, 2004, 7(9): C104-C106
  22. Wang Ying, Zhu Changchun, Song Zhongxiao, Wu Chunyu. Effect of annealing ambience on the thermal stability of Cu/Zr42Si9N49/Si contact system, Materials Letters, 2004, 58(20): 2510-2513
  23. Ying Wang, Fei Cao, Ming-hui Ding, Lei Shao. Evaluation of the Barrier Capability of Zr-Si films with Different Substrate Temperature for Cu Metallization, Applied Surface Science, 2009, 255(9): 4738-4741
  24. Ying Wang, Chunhui Zhao, Zhongxiao Song, Fei Cao. Effect of substrate bias voltages on the diffusion barrier properties of Zr–N films in Cu metallization, Applied Surface Science 2007, 253(22): 8858-8862
  25. Ying Wang, Hai-fan Hu, Chao Cheng. Improved performance of trench power MOSFET with SiGeC-based channel, Microelectronics Reliability. 2011, 51(2): 376-380
  26. Ying Wang, Chao Cheng, Hai-fan Hu. Investigation of power Trench MOSFETs with retrograde body profile, Microelectronics Reliability. 2011, 51(2): 513-516
  27. Ying Wang, Fei Cao, Ming-hui Ding, Yun-tao Liu. Diffusion barrier performance of Zr–N/Zr bilayered film in Cu/Si contact system. Microelectronics Reliability 2008, 48(11-12): 1800-1803
  28. Ying Wang, Minghui Ding, Fei Cao, Dawei Yang. Investigation of Zr–N thin films for use as diffusion barrier in Cu metallization, Microelectronics Journal, 2007, 38(8-9): 910-914
  29. Ying Wang, Wen-li Jiao, Hai-fan Hu, Yun-tao Liu, Fei Cao. A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier. Chinese Physics B, 2012, 21(5): 056104
  30. Ying Wang, Hao Lan, Fei Cao, Yun-tao Liu, Lei Shao. A novel power UMOSFET with a variable K dielectric layer. Chinese Physics B, 2012, 21(6): 068503
  31. Wang Ying, Li Ting, Cao Fei, Shao Lei, Chen Yu-xian. Junction Barrier Schottky Rectifier with Improved P-well Region. Chinese Physics B, 2012, 21(12)
  32. Ying Wang, Fei Cao, and Mi-lin Zhang. A New Field-Assisted Annealing Approach for Advanced Cu-Zr Alloy Metallization. Electronic Materials Letters, 2012, 8(5): 507-510
  33. Wang Ying, Ji Feng-li, Gao Song-song. Finite element analysis of thermal stress for different Cu interconnects structure. Microelectronics Reliability, 2012, 52(11): 2856–2860
  34. Wang Ying, Zhu Changchun, Song Zhongxiao, Li Ying. High temperature stability of Zr-Si-N diffusion barrier in Cu/Si contact system, Microelectronic Engineering 2004, 71(1): 69-75
  35. Wang Ying, Zhu Changchun, Wu Chunyu, Liu Junhua. Improving reliability of beveled power semiconductor devices passivated by SIPOS; Microelectronics Reliability, 2005, 45(3-4): 535-539
  36. Ying Wang, Hai-fan Hu, Chao Cheng. Simulation study of semi-superjunction power MOSFET with SiGe pillar, Superlattices and Microstructures, 2010, 47(2): 314-324
  37. Ying Wang, Zhong-xiao Song, Mi-lin Zhang. Performance Improved by Incorporating of Ru Atoms into Zr-Si Diffusion Barrier for Cu Metallization. Chinese Physics Letter, 2012, 29(9): 098501