基本情况
王颖，教授，博士生导师。2005年于西安交通大学获电子科学与技术专业博士学位，分别于2009年、2010年被聘为教授和博士生导师。哈尔滨工程大学Harbin Engineering University信通学院微电子学专业负责人，电子科学与技术研究所副所长和学术带头人。中国电子学会高级会员，中国电源学会高级会员。国家核心期刊《电子元件与材料》特约编委，《微电子期刊》编委，《半导体技术》理事，《半导体学报网》理事。国家自然科学基金、黑龙江省自然科学基金同行评议专家；教育部科技奖评议专家；哈尔滨市科技项目评审、验收专家。
研究领域
半导体物理、半导体器件、集成电路的设计与制造、半导体核辐射探测与抗核辐射加固技术
论文发表
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Ying Wang*, Yue Zhang, Fei Cao, Ming guang
Shan. Single-event Burnout Hardened Structure of Power UMOSFETs with Schottky
Source. IEEE Transactions on Power Electronics, 2014, 29(7): 3733-3737
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Ying Wang*, Cheng-hao Yu, Zheng Dou, Wei
Xue. ingle-Event Burnout Hardening of Power UMOSFETs With Integrated Schottky
Diode. IEEE Transactions on Electron Devices, 2014, 61(5): 1464-1469
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Ying Wang*, Xiao-wen He, Chan Shan. A
Simulation Study of SoI-Like Bulk Silicon MOSFET With Improved Performance.
IEEE Transactions on Electron Devices, 2014, 61(9): 3339 - 3344
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Ying Wang*, Wen-li Jiao, Hai-Fan Hu,
Yun-tao Liu, Jing Gao. Split Gate Enhanced Power UMOSFET with Soft Reverse
Recovery. IEEE Transactions on Electron Devices, 2013, 60(6): 2084-2089
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Ying Wang*, Hai-fan Hu, Cheng-hao Yu, Hao
Lan. High Performance Split GateEnhanced UMOSFET with p-pillar Structure. IEEE
Transactions on Electron Devices, 2013, 60(7): 2302-2307
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Ying Wang*, Yue Zhang, Li-guo Wang,
Chenghao Yu. Single-event Burnout Hardening of Power UMOSFETs with Optimized
Structure. IEEE Transactions on Electron Devices, 2013, 60(6): 2001-2007
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Ying Wang*, Yue Zhang, Cheng-hao Yu.
Research of Single-event Burnout in Power UMOSFETs. IEEE Transactions on
Electron Devices, 2013, 60(2): 161-166
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Ying Wang*, Ting Li, Yu-xian Chen, Fei Cao.
High-Performance Junction Barrier Schottky Rectifier With Optimized Structure.
IEEE Transactions on Electron Devices, 2012, 59(1): 114-120
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Ying Wang*, Hai-fan Hu, Wen-li Jiao,
Yun-tao Liu, Lei Shao. Split Gate Enhanced UMOSFET with Optimized Layout of
Trench Surrounding Mesa. IEEE Transactions on Electron Devices, 2012, 59(11):
3037-3041
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Ying Wang*, Li-kun Xu, Zhi-kun Miao. A
Superjunction Schottky Barrier Diode with Trench Metal-Oxide-Semiconductor
Structure. IEEE Electron Device Letters, 2012, 33(12):1744-1746
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Ying Wang*, Hai-fan Hu, Wen-Li Jiao and
Chao Cheng. Gate Enhanced Power UMOSFET with Ultra-Low On-Resistance, IEEE
Electron Device Letters. 2010, 31(4):338-340
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Ying Wang*, Hai-fan Hu and Wen-Li Jiao.
High-Performance Gate-Enhanced Power UMOSFET With Optimized Structure, IEEE
Electron Device Letters. 2010, 31(11):1281-1283